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NGTB40N120IHLWG

NGTB40N120IHLWG

NGTB40N120IHLWG

ON Semiconductor

NGTB40N120IHLWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB40N120IHLWG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 260W
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 260W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.9V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 40A
Turn Off Time-Nom (toff) 565 ns
IGBT Type Trench Field Stop
Gate Charge 420nC
Current - Collector Pulsed (Icm) 320A
Td (on/off) @ 25°C -/360ns
Switching Energy 1.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.08mm
Length 16.26mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
NGTB40N120IHLWG Product Details

NGTB40N120IHLWG Description


This Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, giving both low on-state voltage and minimum switching loss. It is constructed with a durable and economical Field Stop (FS) Trench. Applications requiring resonant or gentle switching are ideally suited for the IGBT. A robust co-packaged free-wheeling diode with a low forward voltage is incorporated into the gadget.



NGTB40N120IHLWG Features


  • Low Saturation Voltage using Trench with Field Stop Technology

  • Low Switching Loss Reduces System Power Dissipation

  • Optimized for Low Case Temperature in IH Cooker Application

  • Low Gate Charge

  • These are Pb?Free Devices



NGTB40N120IHLWG Applications


  • Inductive Heating

  • Consumer Appliances

  • Soft Switching


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