STGWA15M120DF3  Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capabilities are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in a safer paralleling operation.

STGWA15M120DF3  Features

10 μS of short-circuit withstand time

VCcE(sat)= 1.85V (Typ.)@lc=15A

Tight parameters distribution

Safer paralleling

Low thermal resistance

Soft and fast recovery antiparallel diode

STGWA15M120DF3  Applications

Industrial drives

UPS

Solar

Welding