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NGTB45N60S2WG

  • NGTB45N60S2WG
  • NGTB45N60S2WG

NGTB45N60S2WG

NGTB45N60S2WG

ON Semiconductor

NGTB45N60S2WG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB45N60S2WG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Through Hole
Package / Case TO-247
Number of Pins 3
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Element Configuration Single
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 90A
Reverse Recovery Time 498 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.900368 $1.900368
10 $1.792800 $17.928
100 $1.691321 $169.1321
500 $1.595586 $797.793
1000 $1.505269 $1505.269
NGTB45N60S2WG Product Details

NGTB45N60S2WG Description


The NGTB45N60S2WG IGBT features a robust and cost-effective Trench construction and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.



NGTB45N60S2WG Features


  • Low Switching Loss Reduces System Power Dissipation

  • TJmax = 175°C

  • Soft, Fast Free Wheeling Diode

  • This is a Pb?Free Device



NGTB45N60S2WG Applications


  • Welding


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