IGP40N65H5XKSA1                        Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

IGP40N65H5XKSA1                       Features 

High speed H5 technology offering

*Best-in-Class efficiency in hard switching and resonant topologies

·Plug and play replacement of previous generation 1GBTs650V breakdown voltage·Low gate charge QG

·Maximum junction temperature175°C

Qualified according to JEDEC for target applications+Pb-free lead plating;RoHS compliant

Complete product spectrum and PSpice Models

IGP40N65H5XKSA1                       Applications

·Solar converters

Uninterruptible power supplies

Welding converters

·Mid to high range switching frequency converters