STGFW20V60F datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGFW20V60F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
52W
Base Part Number
STGFW20
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
52W
Case Connection
ISOLATED
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
40A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.3V
Turn On Time
49 ns
Test Condition
400V, 20A, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 20A
Turn Off Time-Nom (toff)
173 ns
IGBT Type
Trench Field Stop
Gate Charge
116nC
Current - Collector Pulsed (Icm)
80A
Td (on/off) @ 25°C
38ns/149ns
Switching Energy
200μJ (on), 130μJ (off)
Height
23.2mm
Length
15.7mm
Width
5.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.137000
$2.137
10
$2.016038
$20.16038
100
$1.901922
$190.1922
500
$1.794266
$897.133
1000
$1.692704
$1692.704
STGFW20V60F Product Details
STGFW20V60F Description
STGFW20V60F is a 600v trench gate field-stop IGBT. The transistor STGFW20V60F is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGFW20V60F is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VcE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.