IXBF42N300

new-10%

Manufacturer part number:IXBF42N300

Manufacturer:IXYS

Description:IGBT 3000V TO247

Case Package:SOT-23

Datasheet:IXBF42N300 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-4, Isolated
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	BIMOSFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	240W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	240W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	60A
Reverse Recovery Time	1.7 μs
Collector Emitter Breakdown Voltage	3kV
Voltage - Collector Emitter Breakdown (Max)	3000V
Turn On Time	652 ns
Test Condition	1500V, 42A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 42A
Turn Off Time-Nom (toff)	950 ns
Gate Charge	200nC
Current - Collector Pulsed (Icm)	380A
Td (on/off) @ 25°C	72ns/445ns
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant