IRGB4060DPBF

new-10%

Manufacturer part number:IRGB4060DPBF

Manufacturer:Infineon Technologies

Description:IRGB4060DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGB4060DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	99W
Number of Elements	1
Element Configuration	Single
Power Dissipation	99W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	39 ns
Transistor Application	POWER CONTROL
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	106 ns
Collector Emitter Voltage (VCEO)	1.85V
Max Collector Current	16A
Reverse Recovery Time	60 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.95V
Voltage - Collector Emitter Breakdown (Max)	600V
Collector Emitter Saturation Voltage	1.85V
Turn On Time	45 ns
Test Condition	400V, 8A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 8A
Turn Off Time-Nom (toff)	152 ns
IGBT Type	Trench
Gate Charge	19nC
Current - Collector Pulsed (Icm)	32A
Td (on/off) @ 25°C	30ns/95ns
Switching Energy	70μJ (on), 145μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	26ns
Height	9.02mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free