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NGTD23T120F2WP

NGTD23T120F2WP

NGTD23T120F2WP

ON Semiconductor

NGTD23T120F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTD23T120F2WP Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case Die
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2016
Pbfree Code yes
Part Status Active
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 25A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 120A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
104 $3.09933 $322.33032
NGTD23T120F2WP Product Details

NGTD23T120F2WP Description


NGTD23T120F2WP, manufactured by ON Semiconductor. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Advanced driver assistance systems (ADAS) Industrial Factory automation & control Enterprise systems Enterprise machines. And the main parameters of this part is IGBT TRENCH FIELD STOP 1200V DIE. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



NGTD23T120F2WP Features


  • TJmax = 175°C

  • These are Pb?Free Devices

  • 10 μs Short Circuit Capability

  • Optimized for High-Speed Switching

  • Extremely Efficient Trench with Field Stop Technology



NGTD23T120F2WP Applications


  • Welding

  • Solar Inverter

  • Uninterruptible Power Inverter Supplies (UPS)


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