NTD5805NT4G    Description

Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.

NTD5805NT4G       Features

? Low RDS(on)

? High Current Capability

? Avalanche Energy Specified

? NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

NTD5805NT4G      Applications

? LED Backlight Driver

? CCFL Backlight

? DC Motor Control

? Power Supply Secondary Side Synchronous Rectification