2SC4027T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4027T-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2004
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Base Part Number
2SC4027
Pin Count
3
Configuration
Single
Power - Max
1W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
2SC4027T-E Product Details
2SC4027T-E Overview
DC current gain in this device equals 200 @ 100mA 5V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 50mA, 500mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SC4027T-E Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 450mV @ 50mA, 500mA the emitter base voltage is kept at -6V
2SC4027T-E Applications
There are a lot of ON Semiconductor 2SC4027T-E applications of single BJT transistors.