2N4400BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N4400BU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N4400
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.075680
$3.07568
10
$2.901585
$29.01585
100
$2.737344
$273.7344
500
$2.582400
$1291.2
1000
$2.436227
$2436.227
2N4400BU Product Details
2N4400BU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 150mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.The product comes in the supplier device package of TO-92-3.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N4400BU Features
the DC current gain for this device is 50 @ 150mA 1V the vce saturation(Max) is 750mV @ 50mA, 500mA the supplier device package of TO-92-3
2N4400BU Applications
There are a lot of ON Semiconductor 2N4400BU applications of single BJT transistors.