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2N4400BU

2N4400BU

2N4400BU

ON Semiconductor

2N4400BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N4400BU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N4400
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.075680 $3.07568
10 $2.901585 $29.01585
100 $2.737344 $273.7344
500 $2.582400 $1291.2
1000 $2.436227 $2436.227
2N4400BU Product Details

2N4400BU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 150mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 750mV @ 50mA, 500mA.The product comes in the supplier device package of TO-92-3.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N4400BU Features


the DC current gain for this device is 50 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the supplier device package of TO-92-3

2N4400BU Applications


There are a lot of ON Semiconductor 2N4400BU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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