NJVMJB41CT4G Overview
DC current gain in this device equals 15 @ 3A 4V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 600mA, 6A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As a result, the part has a transition frequency of 3MHz.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 6A volts.
NJVMJB41CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
NJVMJB41CT4G Applications
There are a lot of ON Semiconductor NJVMJB41CT4G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
