NJW0302G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJW0302G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
26 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
150W
Frequency
30MHz
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
15A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 3A 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
Height
20.1mm
Length
15.8mm
Width
5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.11000
$3.11
30
$2.63833
$79.1499
120
$2.28667
$274.4004
510
$1.94659
$992.7609
1,020
$1.64170
$1.6417
NJW0302G Product Details
NJW0302G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 3A 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.30MHz is present in the transition frequency.Collector current can be as low as 15A volts at its maximum.
NJW0302G Features
the DC current gain for this device is 75 @ 3A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 500mA, 5A the emitter base voltage is kept at 5V a transition frequency of 30MHz
NJW0302G Applications
There are a lot of ON Semiconductor NJW0302G applications of single BJT transistors.