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NJW0302G

NJW0302G

NJW0302G

ON Semiconductor

NJW0302G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJW0302G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 150W
Frequency 30MHz
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 3A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 30MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.11000 $3.11
30 $2.63833 $79.1499
120 $2.28667 $274.4004
510 $1.94659 $992.7609
1,020 $1.64170 $1.6417
NJW0302G Product Details

NJW0302G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 75 @ 3A 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.When VCE saturation is 1V @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.30MHz is present in the transition frequency.Collector current can be as low as 15A volts at its maximum.

NJW0302G Features


the DC current gain for this device is 75 @ 3A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz

NJW0302G Applications


There are a lot of ON Semiconductor NJW0302G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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