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NSBC115EDXV6T1G

  • NSBC115EDXV6T1G
  • NSBC115EDXV6T1G

NSBC115EDXV6T1G

NSBC115EDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

SOT-23

NSBC115EDXV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NSBC1*
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 100k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 100k Ω
Height 600μm
Length 1.7mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.10935 $0.4374
8,000 $0.10305 $0.8244
12,000 $0.09675 $1.161
28,000 $0.08940 $2.5032
NSBC115EDXV6T1G Product Details
The ON Semiconductor NSBC115EDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. This device is designed for use in low-power, low-voltage applications. It features a low collector-emitter saturation voltage of 0.5V and a maximum collector current of 100mA. The device is also designed to provide excellent thermal stability and high-frequency performance.

Features of the ON Semiconductor NSBC115EDXV6T1G include:
• Low collector-emitter saturation voltage of 0.5V
• Maximum collector current of 100mA
• Excellent thermal stability
• High-frequency performance
• Low-power, low-voltage applications
• SOT563 package

The ON Semiconductor NSBC115EDXV6T1G is suitable for a wide range of applications, including:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Audio/video
• Security systems

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