Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NSBC123JDXV6T1G

  • NSBC123JDXV6T1G
  • NSBC123JDXV6T1G

NSBC123JDXV6T1G

NSBC123JDXV6T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.5W SOT563

SOT-23

NSBC123JDXV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBC1*
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 357mW
Transistor Application SWITCHING
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.914020 $0.91402
10 $0.862283 $8.62283
100 $0.813475 $81.3475
500 $0.767429 $383.7145
1000 $0.723990 $723.99
NSBC123JDXV6T1G Product Details
The ON Semiconductor NSBC123JDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. This device is designed to provide a low-cost, space-saving solution for applications requiring two NPN transistors. It features a maximum power dissipation of 0.5W and a maximum collector-emitter voltage of 30V.

Features of the NSBC123JDXV6T1G include a low-cost, space-saving solution, a maximum power dissipation of 0.5W, a maximum collector-emitter voltage of 30V, and a low-noise operation. It also has a high-speed switching capability and a low-saturation voltage.

The NSBC123JDXV6T1G is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and automotive applications. It is also suitable for use in consumer electronics, such as TVs, DVD players, and gaming consoles.

Related Part Number

RN1709,LF
Toshiba Semiconductor and Storage
RN1709,LF
$0 $/piece
PBLS4004Y,115
Nexperia USA Inc.
PBLS4004Y,115
$0 $/piece
PBLS1502Y,115
Nexperia USA Inc.
PBLS1502Y,115
$0 $/piece
RN2902,LF(CT
Toshiba Semiconductor and Storage
RN2902,LF(CT
$0 $/piece
RN1707,LF
Toshiba Semiconductor and Storage
RN1707,LF
$0 $/piece
RN4990(TE85L,F)
Toshiba Semiconductor and Storage
RN4990(TE85L,F)
$0 $/piece
RN2905FE,LF(CT
Toshiba Semiconductor and Storage
RN2905FE,LF(CT
$0 $/piece
DMC561070R
Panasonic Electronic Components
DMC561070R
$0 $/piece
PUMD6/ZLX
Nexperia USA Inc.
PUMD6/ZLX
$0 $/piece
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News