NSM80101MT1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 10mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

NSM80101MT1G Features

the DC current gain for this device is 120 @ 10mA 1V
the vce saturation(Max) is 300mV @ 10mA, 100mA
a transition frequency of 150MHz

NSM80101MT1G Applications

There are a lot of ON Semiconductor NSM80101MT1G applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface