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PBSS5240Y,115

  • PBSS5240Y,115
  • PBSS5240Y,115

PBSS5240Y,115

PBSS5240Y,115

Nexperia USA Inc.

PBSS5240Y,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS5240Y,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 430mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number PBSS5240
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 430mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 40V
Transition Frequency 100MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.171456 $0.171456
10 $0.161751 $1.61751
100 $0.152595 $15.2595
500 $0.143958 $71.979
1000 $0.135809 $135.809
PBSS5240Y,115 Product Details

PBSS5240Y,115 Overview


This device has a DC current gain of 210 @ 1A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 350mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.Input voltage breakdown is available at 40V volts.Maximum collector currents can be below 2A volts.

PBSS5240Y,115 Features


the DC current gain for this device is 210 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS5240Y,115 Applications


There are a lot of Nexperia USA Inc. PBSS5240Y,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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