SMMBT6521LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 2mA 10V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.Maximum collector currents can be below 100mA volts.
SMMBT6521LT1G Features
the DC current gain for this device is 300 @ 2mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
SMMBT6521LT1G Applications
There are a lot of ON Semiconductor SMMBT6521LT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
