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BD535J

BD535J

BD535J

ON Semiconductor

BD535J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD535J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD535
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.20000 $0.2
500 $0.198 $99
1000 $0.196 $196
1500 $0.194 $291
2000 $0.192 $384
2500 $0.19 $475
BD535J Product Details

BD535J Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).TO-220-3 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.

BD535J Features


the DC current gain for this device is 30 @ 2A 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-220-3

BD535J Applications


There are a lot of ON Semiconductor BD535J applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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