BD535J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD535J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD535
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.20000
$0.2
500
$0.198
$99
1000
$0.196
$196
1500
$0.194
$291
2000
$0.192
$384
2500
$0.19
$475
BD535J Product Details
BD535J Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).TO-220-3 is the supplier device package for this product.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
BD535J Features
the DC current gain for this device is 30 @ 2A 2V the vce saturation(Max) is 800mV @ 200mA, 2A the supplier device package of TO-220-3
BD535J Applications
There are a lot of ON Semiconductor BD535J applications of single BJT transistors.