PBSS303NZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS303NZ,135 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
73
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
130MHz
Base Part Number
PBSS303N
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
5.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
240mV @ 275mA, 5.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
130MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
375ns
Turn On Time-Max (ton)
65ns
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.208240
$4.20824
10
$3.970038
$39.70038
100
$3.745319
$374.5319
500
$3.533319
$1766.6595
1000
$3.333320
$3333.32
PBSS303NZ,135 Product Details
PBSS303NZ,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2A 2V.When VCE saturation is 240mV @ 275mA, 5.5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Parts of this part have transition frequencies of 130MHz.As a result, it can handle voltages as low as 30V volts.Single BJT transistor is possible for the collector current to fall as low as 5.5A volts at Single BJT transistors maximum.
PBSS303NZ,135 Features
the DC current gain for this device is 250 @ 2A 2V the vce saturation(Max) is 240mV @ 275mA, 5.5A the emitter base voltage is kept at 5V a transition frequency of 130MHz
PBSS303NZ,135 Applications
There are a lot of Nexperia USA Inc. PBSS303NZ,135 applications of single BJT transistors.