KST5087MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -3V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.In the part, the transition frequency is 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Maximum collector currents can be below 50mA volts.
KST5087MTF Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -3V
the current rating of this device is -50mA
a transition frequency of 40MHz
KST5087MTF Applications
There are a lot of ON Semiconductor KST5087MTF applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
