KST5087MTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KST5087MTF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-50mA
Frequency
40MHz
Base Part Number
KST5087
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
40MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
-300mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-3V
hFE Min
250
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.127911
$0.127911
10
$0.120670
$1.2067
100
$0.113840
$11.384
500
$0.107396
$53.698
1000
$0.101317
$101.317
KST5087MTF Product Details
KST5087MTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at -3V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.In the part, the transition frequency is 40MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Maximum collector currents can be below 50mA volts.
KST5087MTF Features
the DC current gain for this device is 250 @ 100μA 5V a collector emitter saturation voltage of -300mV the vce saturation(Max) is 300mV @ 1mA, 10mA the emitter base voltage is kept at -3V the current rating of this device is -50mA a transition frequency of 40MHz
KST5087MTF Applications
There are a lot of ON Semiconductor KST5087MTF applications of single BJT transistors.