BC856BW,135 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In the part, the transition frequency is 100MHz.Single BJT transistor can take a breakdown input voltage of 65V volts.Maximum collector currents can be below 100mA volts.

BC856BW,135 Features

the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC856BW,135 Applications

There are a lot of Nexperia USA Inc. BC856BW,135 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter