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DXTN07100BFG-7

  • DXTN07100BFG-7
  • DXTN07100BFG-7

DXTN07100BFG-7

DXTN07100BFG-7

Diodes Incorporated

DXTN07100BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTN07100BFG-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 2A
Frequency - Transition 175MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.477000 $0.477
10 $0.450000 $4.5
100 $0.424528 $42.4528
500 $0.400498 $200.249
1000 $0.377829 $377.829
DXTN07100BFG-7 Product Details

DXTN07100BFG-7 Overview


DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 200mA, 2A.The device exhibits a collector-emitter breakdown at 100V.

DXTN07100BFG-7 Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 400mV @ 200mA, 2A

DXTN07100BFG-7 Applications


There are a lot of Diodes Incorporated DXTN07100BFG-7 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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