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NSV60101DMR6T1G

NSV60101DMR6T1G

NSV60101DMR6T1G

ON Semiconductor

60V, 1A DUAL NPN LOW VCE(

SOT-23

NSV60101DMR6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Silver (Ag)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Power - Max 530mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.403503 $0.403503
10 $0.380663 $3.80663
100 $0.359116 $35.9116
500 $0.338788 $169.394
1000 $0.319612 $319.612

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