2SA2039-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA2039-E Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Terminal Position
SINGLE
Frequency
360MHz
Base Part Number
2SA2039
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
800mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
430mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
5A
Transition Frequency
360MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.697600
$3.6976
10
$3.488302
$34.88302
100
$3.290851
$329.0851
500
$3.104576
$1552.288
1000
$2.928846
$2928.846
2SA2039-E Product Details
2SA2039-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 430mV @ 100mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.In the part, the transition frequency is 360MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SA2039-E Features
the DC current gain for this device is 200 @ 500mA 2V the vce saturation(Max) is 430mV @ 100mA, 2A the emitter base voltage is kept at 6V a transition frequency of 360MHz
2SA2039-E Applications
There are a lot of ON Semiconductor 2SA2039-E applications of single BJT transistors.