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NSVMMBT5401LT3G

NSVMMBT5401LT3G

NSVMMBT5401LT3G

ON Semiconductor

NSVMMBT5401LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVMMBT5401LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
Continuous Collector Current -500mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.317000 $0.317
10 $0.299057 $2.99057
100 $0.282129 $28.2129
500 $0.266159 $133.0795
1000 $0.251094 $251.094
NSVMMBT5401LT3G Product Details

NSVMMBT5401LT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.In extreme cases, the collector current can be as low as 500mA volts.

NSVMMBT5401LT3G Features


the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

NSVMMBT5401LT3G Applications


There are a lot of ON Semiconductor NSVMMBT5401LT3G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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