NSVMMBT5401LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 5mA, 50mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.There is a transition frequency of 100MHz in the part.In extreme cases, the collector current can be as low as 500mA volts.
NSVMMBT5401LT3G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
NSVMMBT5401LT3G Applications
There are a lot of ON Semiconductor NSVMMBT5401LT3G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
