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DSS3515M-7B

DSS3515M-7B

DSS3515M-7B

Diodes Incorporated

DSS3515M-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DSS3515M-7B Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-UFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DSS3515M
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 340MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 15V
Max Frequency 100MHz
Transition Frequency 340MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) -15V
Emitter Base Voltage (VEBO) -6V
Continuous Collector Current -500mA
Height 480μm
Length 1.07mm
Width 675μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.826160 $11.82616
10 $11.156755 $111.56755
100 $10.525240 $1052.524
500 $9.929472 $4964.736
1000 $9.367426 $9367.426
DSS3515M-7B Product Details

DSS3515M-7B Overview


This device has a DC current gain of 150 @ 100mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 500mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.A transition frequency of 340MHz is present in the part.A breakdown input voltage of 15V volts can be used.A maximum collector current of 500mA volts is possible.

DSS3515M-7B Features


the DC current gain for this device is 150 @ 100mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 340MHz

DSS3515M-7B Applications


There are a lot of Diodes Incorporated DSS3515M-7B applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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