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2SD2700TL

2SD2700TL

2SD2700TL

ROHM Semiconductor

2SD2700TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2700TL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Number of Pins 70
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation800mW
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2700
Pin Count3
JESD-30 Code R-PDSO-F3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product360MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage12V
Transition Frequency 360MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10981 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.781680$5.78168
10$5.454415$54.54415
100$5.145675$514.5675
500$4.854410$2427.205
1000$4.579632$4579.632

2SD2700TL Product Details

2SD2700TL Overview


This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 180mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.Single BJT transistor contains a transSingle BJT transistorion frequency of 360MHz.There is a breakdown input voltage of 12V volts that it can take.A maximum collector current of 2A volts is possible.

2SD2700TL Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 360MHz

2SD2700TL Applications


There are a lot of ROHM Semiconductor 2SD2700TL applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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