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NSVPZTA92T1G

NSVPZTA92T1G

NSVPZTA92T1G

ON Semiconductor

NSVPZTA92T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSVPZTA92T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Published 1997
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.5W
Power - Max 1.5W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage300V
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 300V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13430 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.408000$0.408
10$0.384906$3.84906
100$0.363119$36.3119
500$0.342565$171.2825
1000$0.323174$323.174

NSVPZTA92T1G Product Details

NSVPZTA92T1G Overview


DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 500mA volts can be achieved.

NSVPZTA92T1G Features


the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA

NSVPZTA92T1G Applications


There are a lot of ON Semiconductor NSVPZTA92T1G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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