NSVPZTA92T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSVPZTA92T1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.5W
Power - Max
1.5W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
300V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.408000
$0.408
10
$0.384906
$3.84906
100
$0.363119
$36.3119
500
$0.342565
$171.2825
1000
$0.323174
$323.174
NSVPZTA92T1G Product Details
NSVPZTA92T1G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A maximum collector current of 500mA volts can be achieved.
NSVPZTA92T1G Features
the DC current gain for this device is 40 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA
NSVPZTA92T1G Applications
There are a lot of ON Semiconductor NSVPZTA92T1G applications of single BJT transistors.