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2N5087 PBFREE

  • 2N5087 PBFREE
  • 2N5087 PBFREE

2N5087 PBFREE

2N5087 PBFREE

Central Semiconductor Corp

2N5087 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N5087 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 40MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.398534 $0.398534
10 $0.375975 $3.75975
100 $0.354694 $35.4694
500 $0.334616 $167.308
1000 $0.315676 $315.676
2N5087 PBFREE Product Details

2N5087 PBFREE Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.When VCE saturation is 300mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).The device exhibits a collector-emitter breakdown at 50V.

2N5087 PBFREE Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA

2N5087 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N5087 PBFREE applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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