ZXTP25100CZTA Overview

In this device, the DC current gain is 200 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -225mV.When VCE saturation is 225mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.180MHz is present in the transition frequency.The breakdown input voltage is 100V volts.Maximum collector currents can be below 1A volts.

ZXTP25100CZTA Features

the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -225mV
the vce saturation(Max) is 225mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

ZXTP25100CZTA Applications

There are a lot of Diodes Incorporated ZXTP25100CZTA applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface