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NTA4151PT1H

NTA4151PT1H

NTA4151PT1H

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 360m Ω @ 350mA, 4.5V ±6V 156pF @ 5V 2.1nC @ 4.5V 20V SC-75, SOT-416

SOT-23

NTA4151PT1H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Power Dissipation-Max 301mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 301mW
Turn On Delay Time 8 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 156pF @ 5V
Current - Continuous Drain (Id) @ 25°C 760mA Tj
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 8.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 20.4 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 760mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.76A
DS Breakdown Voltage-Min 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.10350 $0.3105
6,000 $0.09800 $0.588
15,000 $0.08975 $1.34625
30,000 $0.08425 $2.5275
75,000 $0.07600 $5.7
NTA4151PT1H Product Details

NTA4151PT1H Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 156pF @ 5V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 760mA amps.A device can conduct a maximum continuous current of [0.76A] according to its drain current.It is [29 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 6V.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

NTA4151PT1H Features


a continuous drain current (ID) of 760mA
the turn-off delay time is 29 ns
a 20V drain to source voltage (Vdss)


NTA4151PT1H Applications


There are a lot of ON Semiconductor
NTA4151PT1H applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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