NTB5404NT4G

new-10%

Manufacturer part number:NTB5404NT4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 40V 24A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:NTB5404NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	5.4W Ta 254W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	167W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 32V
Current - Continuous Drain (Id) @ 25°C	167A Tc
Gate Charge (Qg) (Max) @ Vgs	125nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	85 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	136A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0045Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	258A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free