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SUD50N06-08H-E3

SUD50N06-08H-E3

SUD50N06-08H-E3

Vishay Siliconix

MOSFET N-CH 60V 93A TO252

SOT-23

SUD50N06-08H-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 3W Ta 136W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation136W
Case Connection DRAIN
Turn On Delay Time28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 93A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 93A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.0078Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 125 mJ
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
RoHS StatusROHS3 Compliant
In-Stock:4955 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SUD50N06-08H-E3

The SUD50N06-08H-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 93A TO252.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SUD50N06-08H-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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