SUD50N06-08H-E3

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SUD50N06-08H-E3

Manufacturer part number:SUD50N06-08H-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 93A TO252

Case Package:SOT-23

Datasheet:SUD50N06-08H-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	3W Ta 136W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	136W
Case Connection	DRAIN
Turn On Delay Time	28 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	93A Tc
Gate Charge (Qg) (Max) @ Vgs	145nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	93A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain-source On Resistance-Max	0.0078Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	125 mJ
Height	2.3876mm
Length	6.7056mm
Width	6.223mm
RoHS Status	ROHS3 Compliant