NTB75N06LG

new-10%

Manufacturer part number:NTB75N06LG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 75A D2PAK

Case Package:SOT-23

Datasheet:NTB75N06LG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	75A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	2.4W Ta 214W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	214W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 37.5A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Ta
Gate Charge (Qg) (Max) @ Vgs	92nC @ 5V
Rise Time	265ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	170 ns
Turn-Off Delay Time	113 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.011Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	225A
Avalanche Energy Rating (Eas)	844 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free