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NTD12N10G

NTD12N10G

NTD12N10G

ON Semiconductor

NTD12N10G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD12N10G Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 12A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.28W Ta 56.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 56.6W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 75 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
NTD12N10G Product Details

NTD12N10G Description


made by On Semiconductor, is the NTD12N10G. It falls within the category of electronic components, ICs. It is used in a variety of industries, such as communications equipment. Enterprise systems, data centers, and enterprise computing datacom module electronic devices electronics on the go.

Power Mosfet, 12 A, 100 V are this part's primary specifications. It is also environmentally friendly and RoHS compliant (lead free).



NTD12N10G Features


  • These are Pb?Free Devices

  • Avalanche Energy Specified

  • IDSS and RDS(on) Specified at Elevated Temperature

  • Mounting Information Provided for the DPAK Package

  • Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode



NTD12N10G Applications


  • Converters

  • Power Supplies

  • PWM Motor Controls


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