NTD14N03R-1G

new-10%

Manufacturer part number:NTD14N03R-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 2.5A IPAK

Case Package:SOT-23

Datasheet:NTD14N03R-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.04W Ta 20.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.56W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	95m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	115pF @ 20V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 5V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	9.6 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	11.4A
Drain-source On Resistance-Max	0.13Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	28A
RoHS Status	RoHS Compliant
Lead Free	Lead Free