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NTD25P03LT4G

  • NTD25P03LT4G
  • NTD25P03LT4G

NTD25P03LT4G

NTD25P03LT4G

ON Semiconductor

NTD25P03LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD25P03LT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 51MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -25A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 75W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 37ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±15V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 25A
Threshold Voltage -1.6V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs -1.6 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.17000 $1.17
500 $1.1583 $579.15
1000 $1.1466 $1146.6
1500 $1.1349 $1702.35
2000 $1.1232 $2246.4
2500 $1.1115 $2778.75
NTD25P03LT4G Product Details

NTD25P03LT4G Description


The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high-speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode.  The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD25P03LT4G is in the TO-252-4 package with 75W power dissipation.



NTD25P03LT4G Features


  • AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and RoHS Compliant

  • Drain?to?Source Voltage: -30v

  • Total Power Dissipation @ TA= 25°C: 75w

  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements



NTD25P03LT4G Applications


  • PWM Motor Controls

  • Power Supplies

  • Converters

  • Bridge Circuits

  • Motor Drive & Control

  • Power Management


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