NTD3055-094-1G

new-10%

Manufacturer part number:NTD3055-094-1G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Rail

Case Package:SOT-23

Datasheet:NTD3055-094-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Resistance	94MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	12A
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	1.5W Ta 48W Tj
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	48W
Case Connection	DRAIN
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	32.3ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23.9 ns
Turn-Off Delay Time	25.2 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	2.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free