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NTD3055L170-1G

NTD3055L170-1G

NTD3055L170-1G

ON Semiconductor

MOSFET N-CH 60V 9A IPAK

SOT-23

NTD3055L170-1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating9A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSIP-T3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 28.5W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation28.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
Rise Time69ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.17Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 27A
Avalanche Energy Rating (Eas) 30 mJ
Nominal Vgs 1.7 V
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1944 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.758741$0.758741
10$0.715793$7.15793
100$0.675277$67.5277
500$0.637054$318.527
1000$0.600994$600.994

About NTD3055L170-1G

The NTD3055L170-1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 9A IPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTD3055L170-1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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