NTD4805N-35G

new-10%

Manufacturer part number:NTD4805N-35G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 12.6A IPAK

Case Package:SOT-23

Datasheet:NTD4805N-35G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.41W Ta 79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.24W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2865pF @ 12V
Current - Continuous Drain (Id) @ 25°C	12.7A Ta 95A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 11.5V
Rise Time	20.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	20.8 ns
Continuous Drain Current (ID)	95A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	12.6A
Drain-source On Resistance-Max	0.0074Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	175A
Avalanche Energy Rating (Eas)	288 mJ
RoHS Status	RoHS Compliant