NTHS5443T1

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Manufacturer part number:NTHS5443T1

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 20V 3.6A CHIPFET

Case Package:SOT-23

Datasheet:NTHS5443T1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Current Rating	-3.6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	3.6A Ta
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	3.6A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	-20V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead