NTD4813N-35G

new-10%

Manufacturer part number:NTD4813N-35G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 7.6A IPAK

Case Package:SOT-23

Datasheet:NTD4813N-35G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	1.27W Ta 35.3W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.94W
Case Connection	DRAIN
Turn On Delay Time	10.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 12V
Current - Continuous Drain (Id) @ 25°C	7.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	7.9nC @ 4.5V
Rise Time	19.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 11.5V
Vgs (Max)	±20V
Fall Time (Typ)	19.3 ns
Turn-Off Delay Time	10.1 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7.6A
Drain-source On Resistance-Max	0.024Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	90A
Avalanche Energy Rating (Eas)	72 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free