PSMN0R9-25YLC,115

new-10%

Manufacturer part number:PSMN0R9-25YLC,115

Manufacturer:Nexperia USA Inc.

Description:NEXPERIA - PSMN0R9-25YLC,115 - MOSFET, N-KANAL, 25V, 100A, LFPAK

Case Package:SOT-23

Datasheet:PSMN0R9-25YLC,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	272W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	0.99m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	1.95V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6775pF @ 12V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	25V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	100A
Drain-source On Resistance-Max	0.00125Ohm
Pulsed Drain Current-Max (IDM)	1563A
DS Breakdown Voltage-Min	25V
Avalanche Energy Rating (Eas)	342 mJ
RoHS Status	ROHS3 Compliant