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TK35A65W,S5X

TK35A65W,S5X

TK35A65W,S5X

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 17.5A, 10V ±30V 4100pF @ 300V 100nC @ 10V 650V TO-220-3 Full Pack

SOT-23

TK35A65W,S5X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Turn On Delay Time 70 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.1mA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Current - Continuous Drain (Id) @ 25°C 35A Ta
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.50000 $6.5
50 $5.33000 $266.5
100 $4.81000 $481
500 $4.03000 $2015
1,000 $3.64000 $3.64
TK35A65W,S5X Product Details

TK35A65W,S5X Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4100pF @ 300V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 35A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 150 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 70 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

TK35A65W,S5X Features


a continuous drain current (ID) of 35A
the turn-off delay time is 150 ns
a 650V drain to source voltage (Vdss)


TK35A65W,S5X Applications


There are a lot of Toshiba Semiconductor and Storage
TK35A65W,S5X applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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