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NTD4959N-1G

NTD4959N-1G

NTD4959N-1G

ON Semiconductor

MOSFET N-CH 30V 9A IPAK

SOT-23

NTD4959N-1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.3W Ta 52W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1456pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9A Ta 58A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 11.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 58A
RoHS Status RoHS Compliant

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