FDR6674A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDR6674A Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-LSOP (0.130, 3.30mm Width)
Number of Pins
8
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
11.5A
Number of Elements
1
Power Dissipation-Max
1.8W Ta
Power Dissipation
1.8W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9.5m Ω @ 10.5A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5070pF @ 15V
Current - Continuous Drain (Id) @ 25°C
11.5A Ta
Gate Charge (Qg) (Max) @ Vgs
46nC @ 4.5V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±12V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
69 ns
Continuous Drain Current (ID)
11.5A
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.2 V
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FDR6674A Product Details
FDR6674A Description
FDR6674A is a 30v N-Channel PowerTrench MOSFET. The N-Channel MOSFET FDR6674A has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for“low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDR6674A Features
11.5A, 30V RDS(ON) = 9.5mΩ, @VGS = 4.5V
RDS(ON) = 8.5mΩ, @VGS = 10V
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability in a smaller footprint than SO8
Drain-Source Voltage: 30v
Gate-Source Voltage: ±12v
FDR6674A Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator