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PHP75NQ08T,127

PHP75NQ08T,127

PHP75NQ08T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 13m Ω @ 25A, 10V ±20V 1985pF @ 25V 40nC @ 10V 75V TO-220-3

SOT-23

PHP75NQ08T,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 157W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1985pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
PHP75NQ08T,127 Product Details

PHP75NQ08T,127 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 120 mJ.A device's maximum input capacitance is 1985pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 75A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 240A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 75V.To operate this transistor, you need to apply a 75V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

PHP75NQ08T,127 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 240A.
a 75V drain to source voltage (Vdss)


PHP75NQ08T,127 Applications


There are a lot of NXP USA Inc.
PHP75NQ08T,127 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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