NTD5865NLT4G

new-10%

Manufacturer part number:NTD5865NLT4G

Manufacturer:ON Semiconductor

Description:MOSFET Single N-CH 60V 40A

Case Package:SOT-23

Datasheet:NTD5865NLT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	16MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	71W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	52W
Case Connection	DRAIN
Turn On Delay Time	8.4 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	46A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	12.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4.4 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	46A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	36 mJ
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free