2SK1058-E Description
N-Channel MOS FET in silicon
2SK1058-E Features
• favourable frequency characteristics
• Rapid switchover
• A sizable safe operating area
• Improvement mode
• Positive complimentary traits
• Has gate protection diodes installed.
• Suitable for power amplifiers for audio
2SK1058-E Applications
amplifier for low frequency power
pair that complements 2SJ160, 2SJ161, and 2SJ162