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2SK1058-E

2SK1058-E

2SK1058-E

Renesas Electronics America

2SK1058-E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Renesas Electronics America stock available on our website

SOT-23

2SK1058-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Contact PlatingCopper, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier PRSS0004ZE-A
Operating Temperature150°C TJ
PackagingTube
Published 2005
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 160V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating7A
Pin Count4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 100W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation100W
Case Connection SOURCE
Turn On Delay Time180 ns
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Vgs (Max) ±15V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 15V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 160V
Height 22.1mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4107 items

2SK1058-E Product Details

2SK1058-E Description


N-Channel MOS FET in silicon



2SK1058-E Features


• favourable frequency characteristics


• Rapid switchover


• A sizable safe operating area


• Improvement mode


• Positive complimentary traits


• Has gate protection diodes installed.


• Suitable for power amplifiers for audio



2SK1058-E Applications


  • amplifier for low frequency power

  • pair that complements 2SJ160, 2SJ161, and 2SJ162


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